Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen

• for quantum communication and cryptography. Keywords: active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode; Introduction The nitrogen-vacancy centre (NV centre) in diamond is known to exist in at least three different charge states (NV−, NV0

• channel, NV centres are quenched, i.e., switched to the nonfluorescent state NV+ as proved by PL-intensity mappings which show no bright spots (Figure 1d). For fabricating a two-dimensional Schottky diode structure, aluminium (Al) and gold (Au) contacts with a thickness of 200 nm each were deposited onto